| 1 |
Low-temperature solid-phase crystallization of amorphous SiGe films on glass by imprint technique
Toko K, Kanno H, Kenjo A, Sadoh T, Asano T, Miyao M
Solid-State Electronics, 52(8), 1221, 2008 |
| 2 |
Stress-relaxation mechanism in ultra-thin SiGe on insulator formed by H(+) irradiation-assisted Ge condensation method
Tanaka M, Kenjo A, Sadoh T, Miyao M
Thin Solid Films, 517(1), 248, 2008 |
| 3 |
Influence of substrate orientation on low-temperature epitaxial growth of ferromagnetic silicide Fe3Si on Si
Ueda K, Kizuka R, Takeuchi H, Kenjo A, Sadoh T, Miyao M
Thin Solid Films, 515(22), 8250, 2007 |
| 4 |
Electric field-dependent Ni-mediated lateral crystallization of a-Si on SiO2
Kanno H, Kenjo A, Sadoh T, Miyao M
Thin Solid Films, 508(1-2), 40, 2006 |
| 5 |
Au-induced lateral crystallization of a-Si1-xGex (x : 0-1) at low temperature
Aoki T, Kanno H, Kenjo A, Sadoh T, Miyao M
Thin Solid Films, 508(1-2), 44, 2006 |
| 6 |
Morphological change of Co-nanodot on SiO2 by thermal treatment
Ueda K, Sadoh T, Kenjo A, Shoji F, Sato K, Kurino H, Koyanagi M, Miyao M
Thin Solid Films, 508(1-2), 178, 2006 |
| 7 |
Directional growth in metal-induced lateral crystallization of amorphous Si under extremely high electric field
Kanno H, Kenjo A, Miyao M
Journal of Crystal Growth, 279(1-2), 1, 2005 |
| 8 |
Ge-dependent morphological change in poly-SiGe formed by Ni-mediated crystallization
Sadoh T, Kanno H, Kenjo A, Miyao M
Applied Surface Science, 224(1-4), 227, 2004 |
| 9 |
Enhanced crystal nucleation in a-SiGe/SiO2 by ion-irradiation assisted annealing
Tsunoda I, Kenjo A, Sadoh T, Miyao M
Applied Surface Science, 224(1-4), 231, 2004 |
| 10 |
Strain in beta-FeSi2 modulated by Ge segregation in solid-phase growth of [a-Si/a-FeSiGe], stacked structure
Sadoh T, Murakami Y, Kenjo A, Enokida T, Yoshitake T, Itakura M, Miyao M
Applied Surface Science, 237(1-4), 146, 2004 |
