Metal-induced lateral crystallization of amorphous Si has been investigated under a wide range of electric fields (0-4000 V/cm). In the low field region (< 100 V/cm), lateral growth velocity at cathode side was enhanced by applying an electric field. This achieved the formation of poly Si with a large area (similar to 50 mu m) during low-temperature annealing (525 degrees C, 25 h). When the electric field exceeded 100 V/cm, the lateral growth velocity decreased with increase in the electric field strength. Under the extremely high electric field (> 2000 V/cm), directional growth aligned to the electric field was observed. This new findings will be a powerful tool to achieve new poly Si with highly controlled structures. (c) 2005 Elsevier B.V. All rights reserved.