Solid-phase growth of the [a-Si/a-FeSiGe](n) (n: 1, 2, 4; total thickness: 500 nm) stacked structure has been investigated. After annealing at 700 degreesC, the [a-SiGe/beta-FeSi2(Ge)](n) stacked structures were formed. From the analysis of the X-ray diffraction spectra, it was found that beta-FeSi2(Ge) was strained by 0.4-0.5% for n = 1. With increasing n, the strains decreased, which was due to segregation of Ge atoms from the a-FeSiGe layers to the a-Si layers. After annealing at 800 degreesC, agglomeration of beta-FeSi2 occurred and Ge atoms vanished completely from the beta-FeSi2 lattice. Thus, nanocrystals of relaxed beta-FeSi2 and c-Si-0.7/Ge-0.3 were formed. These new structures can be useful for formation of opto-electrical devices. (C) 2004 Elsevier B.V. All rights reserved.