검색결과 : 11건
| No. | Article |
|---|---|
| 1 |
Growth of GaN:Mg crystals by high nitrogen pressure solution method in multi-feed-seed configuration Grzegory I, Bockowski M, Lucznik B, Weyher J, Litwin-Staszewska E, Konczewicz L, Sadovyi B, Nowakowski P, Porowski S Journal of Crystal Growth, 350(1), 50, 2012 |
| 2 |
Ca3N2 as a flux for crystallization of GaN Bockowski M, Grzegory I, Kchahapuridze A, Gierlotka S, Porowski S Journal of Crystal Growth, 312(18), 2574, 2010 |
| 3 |
The influence of indium on the growth of GaN from solution under high pressure Grzegory I, Bockowski M, Strak P, Krukowski S, Porowski S Journal of Crystal Growth, 312(18), 2593, 2010 |
| 4 |
GaN crystallization by the high-pressure solution growth method on HVPE bulk seed Bockowski M, Strak P, Grzegory I, Lucznik B, Porowski S Journal of Crystal Growth, 310(17), 3924, 2008 |
| 5 |
Crystallization of low dislocation density GaN by high-pressure solution and HVPE methods Grzegory I, Lucznik B, Bockowski M, Porowski S Journal of Crystal Growth, 300(1), 17, 2007 |
| 6 |
Platelets and needles: Two habits of pressure-grown GaN crystals Bockowski M, Grzegory I, Kamler G, Lucznik B, Krukowski S, Wroblewski M, Kwiatkowski P, Jasik K, Porowski S Journal of Crystal Growth, 305(2), 414, 2007 |
| 7 |
High pressure-high temperature seeded growth of GaN on 1 in sapphire/GaN templates: Analysis of convective transport Bockowski M, Strak P, Kempisty P, Grzegory I, Krukowski S, Lucznik B, Porowski S Journal of Crystal Growth, 307(2), 259, 2007 |
| 8 |
Gallium nitride growth on sapphire/GaN templates at high pressure and high temperatures Bockowski M, Grzegory I, Krukowski S, Lucznik B, Wroblewski M, Kamler G, Borysiuk J, Kwiatkowski P, Jasik K, Porowski S Journal of Crystal Growth, 274(1-2), 55, 2005 |
| 9 |
Growth of GaN on patterned GaN/sapphire substrates by high pressure solution method Bockowski M, Grzegory I, Borysiuk J, Kamler G, Lucznik B, Wroblewski M, Kwiatkowski P, Jasik K, Krukowski S, Porowski S Journal of Crystal Growth, 281(1), 11, 2005 |
| 10 |
Deposition of bulk GaN from solution in gallium under high N-2 pressure on silicon carbide and sapphire substrates Bochowski M, Grzegory I, Krukowski S, Lucznik B, Wroblewski M, Kamler G, Borysiuk J, Kwiatkowski P, Jasik K, Porowski S Journal of Crystal Growth, 270(3-4), 409, 2004 |