Recent results of the bulk GaN crystallization by the high-pressure solution (HPS) growth method are presented. The new experimental configurations for seeded growth on HVPE free-standing GaN crystals are proposed. The growth rate, Morphology and basic physical properties of the pressure-grown materials are reported. The finite element Calculation is used for modeling the convective transport in the Solution. The convectional flow velocity vectors in liquid gallium are determined from experimentally measured temperatures and by solving the set of Navier-Stokes equations. (c) 2008 Elsevier B.V. All rights reserved.