The growth of GaN needles by high-pressure solution method is described in detail and compared to well-known platelets' crystallization. The habit, morphology and crystal quality of the needles are examined. The growth mechanism and main factors determining the crystal habit in high-pressure solution method are discussed. The needles' preparation to be the seeds for HVPE growth is presented. (c) 2007 Elsevier B.V. All rights reserved.