1 |
Wafer temperature measurements during dielectric etching in a MERIE etcher Gabriel CT Journal of Vacuum Science & Technology B, 20(4), 1542, 2002 |
2 |
Modeling and simulation of feature-size-dependent etching of metal stacks Abdollahi-Alibeik S, Zheng J, McVittie JP, Saraswat KC, Gabriel CT, Abraham SC Journal of Vacuum Science & Technology B, 19(1), 179, 2001 |
3 |
Integration of metal masking and etching for deep submicron patterning Gabriel CT, Kim RY, Baker DC Journal of Vacuum Science & Technology A, 18(4), 1420, 2000 |
4 |
Gate oxide damage: Testing approaches and methodologies Gabriel CT Journal of Vacuum Science & Technology A, 17(4), 1494, 1999 |
5 |
Minimizing Metal Etch Rate Pattern Sensitivity in a High-Density Plasma Etcher Gabriel CT, Zheng J, Abraham SC Journal of Vacuum Science & Technology A, 15(3), 697, 1997 |
6 |
Performance of Different Etch Chemistries on Titanium Nitride Antireflective Coating Layers and Related Selectivity and Microloading Improvements for Submicron Geometries Obtained with a High-Density Metal Etcher Abraham SC, Gabriel CT, Zheng J Journal of Vacuum Science & Technology A, 15(3), 702, 1997 |
7 |
Correlation of Antenna Charging and Gate Oxide Reliability Gabriel CT, Nariani SR Journal of Vacuum Science & Technology A, 14(3), 990, 1996 |
8 |
Papers from the 3rd International Workshop on Advanced Plasma Tools for Etching, Chemical-Vapor-Deposition, and Plasma Vapor-Deposition - Sources, Process-Control, and Diagnostics - 3-4 May 1995 Le-Baron-Hotel, San-Jose, California - Preface Gabriel CT Journal of Vacuum Science & Technology B, 14(1), 465, 1996 |
9 |
Control of Plasma Damage to Gate Oxide During High-Density Plasma Chemical-Vapor-Deposition Bothra S, Gabriel CT, Lassig S, Pirkle D Journal of the Electrochemical Society, 142(11), L208, 1995 |
10 |
Effect of Plasma Overetch of Polysilicon on Gate Oxide Damage Gabriel CT, Mcvittie JP Journal of Vacuum Science & Technology A, 13(3), 900, 1995 |