The main types of gate oxide damage measurement techniques are examined and compared, leading to a selection of "application-specific" damage measurement techniques. Each technique has strengths and weaknesses, so no single measurement can completely characterize damage. Instead, a combination of measurement approaches is needed, each one targeted to provide a piece of the damage puzzle. It is helpful to understand the different damage mechanisms when selecting a measurement technique, so a survey of mechanisms is given. Damage proceeds by either direct exposure of the gate oxide (through ion bombardment or ultraviolet radiation) or by indirect exposure (by charging from a nonuniform. plasma or from the presence-of high aspect ratio structures on the wafer). The relative importance of each mechanism depends on process technology and other factors. The most useful combination of damage measurement techniques includes surface potential measurement, electrically erasable read-only memory transistors, direct measurement of charging, antenna transistors, and passive voltage contrast. Damage measurements should be calibrated to device performance parameters such as yield or reliability.