검색결과 : 11건
| No. | Article |
|---|---|
| 1 |
Growth and characterization of broad spectrum infrared emitting GaInAsP/InP heterostructures Rakovics V, Nadas J, Reti I, Ducso C, Battistig G Journal of Crystal Growth, 468, 572, 2017 |
| 2 |
Light-splitting photovoltaic system utilizing two dual-junction solar cells Xiong KL, Lu SL, Dong JR, Zhou TF, Jiang DS, Wang RX, Yang H Solar Energy, 84(12), 1975, 2010 |
| 3 |
Doping effect on the intermixing in GaInAsP/InP multiple quantum well structures grown using all solid sources Zhang DH, Sun L, Yoon SF Journal of Crystal Growth, 268(3-4), 401, 2004 |
| 4 |
Composition dependence of InP/GaxIn1-xAsyP1-y/InP interface structures analyzed by X-ray CTR scattering measurements Tabuchi M, Kyouzu H, Takemi M, Takeda Y Applied Surface Science, 216(1-4), 526, 2003 |
| 5 |
Fabrication of AlGaInAs and GaInAsP buried heterostructure lasers by in situ etching Gessner R, Dobbinson A, Miler A, Rieger J, Veuhoff E Journal of Crystal Growth, 248, 426, 2003 |
| 6 |
Effects of phosphorous beam equivalent pressure on GaInAsP/GaAs grown by solid source molecular beam epitaxy with a valve phosphorous cracker cell Wang XZ, Zhang DH, Zheng HQ, Yoon SF, Kam CH, Shi W, Raman A Journal of Crystal Growth, 210(4), 458, 2000 |
| 7 |
Quantum well intermixing in material systems for 1.5 mu m (invited) Marsh JH, Kowalski OP, McDougall SD, Qiu BC, McKee A, Hamilton CJ, De la Rue RM, Bryce AC Journal of Vacuum Science & Technology A, 16(2), 810, 1998 |
| 8 |
Gas-Source Molecular-Beam Epitaxy Growth of High-Quality InGaAsP for 0.98 Mu-M Al-Free InGaAs/InGaAsP/InGaP Laser-Diodes Liu JS, Chen JG, Lin HH, Tu YK Journal of Vacuum Science & Technology B, 15(3), 707, 1997 |
| 9 |
All-solid-source molecular beam epitaxy for growth of III-V compound semiconductors Pessa M, Toivonen M, Jalonen M, Savolainen P, Salokatve A Thin Solid Films, 306(2), 237, 1997 |
| 10 |
Chemical and Electrochemical Interaction of Acidic H2O2 Solutions with (100)InP Theuwis A, Vermeir IE, Gomes WP Journal of Electroanalytical Chemistry, 410(1), 31, 1996 |