All-solid-source molecular beam epitaxy (SS-MBE) is a novel variant of MBE. It allows for toxic-free growth of III-V compound semiconductors, including phosphides. We have examined the quality of SS-MBE-grown phosphorus containing heterostructures and laser diodes. The results discussed in this article show that state-of-the-art quantum well (QW) materials and lasers, covering a wide range of bandgaps from red to infrared, can be prepared by SS-MBE.