검색결과 : 6건
| No. | Article |
|---|---|
| 1 |
Controllable 6H-SiC to 4H-SiC polytype transformation during PVT growth Tupitsyn EY, Arulchakkaravarthi A, Drachev RV, Sudarshan TS Journal of Crystal Growth, 299(1), 70, 2007 |
| 2 |
Self-congruent process of SiC growth by physical vapor transport Cherednichenko DI, Drachev RV, Sudarshan TS Journal of Crystal Growth, 262(1-4), 175, 2004 |
| 3 |
Analysis of in situ off-axis seeding surface preparation conditions for SiCPVT growth Drachev RV, Cherednichenko DI, Sudarshan TS Journal of Crystal Growth, 265(1-2), 179, 2004 |
| 4 |
Influence of the crystal thickness on the SiCPVT growth rate Cherednichenko D, Khlebnikov Y, Drachev RV, Khlebnikov II, Sudarshan TS Materials Science Forum, 389-3, 95, 2002 |
| 5 |
Graphitization of the seeding surface during the heating stage of SiCPVT bulk growth Drachev RV, Cherednichenko DI, Khlebnikov II, Khlebnikov YI, Sudarshan TS Materials Science Forum, 433-4, 99, 2002 |
| 6 |
Liquid phase silicon at the front of crystallization during SiCPVT growth Drachev RV, Straty GD, Cherednichenko DI, Khlebnikov II, Sudarshan TS Journal of Crystal Growth, 233(3), 541, 2001 |