Silicon carbide bulk crystal growth by physical vapor transport (PVT) is shown to be a self-congruent phenomenon where mass transport of the vapor species and heat dissipation at the surface of phase transformation are interrelated or self-congruent". It is demonstrated that variation of the growth velocity during the period of growth is solely determined by (a) heat dissipation through the volume of the growing crystal and (b) transport rate of vapor species to the surface of crystallization. The above two factors are linked by the crystallization temperature and this dependent relationship establishes the self-congruency of PVT growth. The analysis reveals that the crystallization temperature asymptotically approaches the temperature of the sublimating source as the crystal thickness reaches its upper limit. The growth velocity is a function of the crystal thickness and it is limited by the heat transfer rate through the crystal starting from the early stages of growth. In order to maintain the growth rate at a given value, the crystal backside temperature has to be tailored as a function of the crystal thickness. (C) 2003 Elsevier B.V. All rights reserved.