| 1 |
Advanced thermal processing of ultrashallow implanted junctions using flash lamp annealing
Skorupa W, Gebel T, Yankov RA, Paul S, Lerch W, Downey DF, Arevalo EA
Journal of the Electrochemical Society, 152(6), G436, 2005 |
| 2 |
Deactivation of solid phase epitaxy-activated boron ultrashallow junctions
Lerch W, Paul S, Niess J, Cristiano F, Lamrani Y, Calvo P, Cherkashin N, Downey DF, Arevalo EA
Journal of the Electrochemical Society, 152(10), G787, 2005 |
| 3 |
Secondary ion mass spectrometry analysis of implanted and rapid thermal processing annealed wafers for sub-100 nanometer technology
Ehrke U, Sears A, Lerch W, Paul S, Roters G, Downey DF, Arevalo EA
Journal of Vacuum Science & Technology B, 22(1), 346, 2004 |
| 4 |
Boron ultrashallow junction formation in silicon by low-energy implantation and rapid thermal annealing in inert and oxidizing ambient
Lerch W, Gluck M, Stolwijk NA, Walk H, Schafer M, Marcus SD, Downey DF, Chow JW
Journal of the Electrochemical Society, 146(7), 2670, 1999 |
| 5 |
Techniques and applications of secondary ion mass spectrometry and spreading resistance profiling to measure ultrashallow junction implants down to 0.5 keV B and BF2
Harrington WL, Magee CW, Pawlik M, Downey DF, Osburn CM, Felch SB
Journal of Vacuum Science & Technology B, 16(1), 286, 1998 |
| 6 |
Dose-rate effects on the formation of ultra-shallow junctions with low-energy B+ and BF2+ ion implants
Downey DF, Osburn CM, Cummings JJ, Daryanani S, Falk SW
Thin Solid Films, 308-309, 562, 1997 |
| 7 |
Surface Metal Contamination During Ion-Implantation - Comparison of Measurements by Secondary-Ion Mass-Spectroscopy, Total-Reflection X-Ray-Fluorescence Spectrometry, and Vapor-Phase Decomposition Used in Conjunction with Graphite-Furnace Atomic-Absorption Spectrometry and Inductively-Coupled Plasma-Mass Spectrometry
Frost MR, Harrington WL, Downey DF, Walther SR
Journal of Vacuum Science & Technology B, 14(1), 329, 1996 |
