The use of flash lamp annealing for ultrashallow junction formation in silicon has been described. Low energy boron and arsenic implants have been heat-treated in this way using peak temperatures in the range of 1100 to 1300° C and effective anneal times of 20 and 3 ms. Secondary ion mass spectrometry and four-point probe measurements have been undertaken to determine the junction depth and the sheet resistance, respectively. Optimum processing conditions have been identified, under which one can obtain combinations of junction depth and sheet resistance values that meet the 90 nm technology node requirements and beyond. © 2005 The Electrochemical Society. All rights reserved.