Among the many challenges being addressed by manufacturers and users of ion implanters is the reduction of contamination of wafers during implantation by metals such as Al, Fe, Cr, Na, Cu, Mo, and W. Reproducible and accurate measurement of this near-surface contamination is equally challenging for analytical techniques and analysts. For this study As+ and BF2+ implants were made into Si wafers to study sources of metals contamination and to provide samples to be analyzed by a variety of techniques for comparison of their analytical strengths and weaknesses. Analytical techniques chosen for evaluation were quadrupole and magnetic sector secondary ion mass spectrometry, total reflection x-ray fluorescence spectrometry, and vapor phase decomposition used in conjunction with both graphite furnace atomic absorption spectrometry and inductively coupled plasma mass spectrometry.