검색결과 : 5건
| No. | Article |
|---|---|
| 1 |
Strain engineering of ultra-thin silicon-on-insulator structures using through-buried-oxide ion implantation and crystallization Ding YJ, Cheng R, Zhou Q, Du AY, Daval N, Nguyen BY, Yeo YC Solid-State Electronics, 83, 37, 2013 |
| 2 |
Dual strained channel CMOS in FDSOI architecture: New insights on the device performance Le Royer C, Casse M, Cooper D, Andrieu F, Weber O, Brevard L, Perreau P, Damlencourt JF, Baudot S, Previtali B, Tabone C, Allain F, Scheiblin P, Rauer C, Figuet C, Aulnette C, Daval N, Nguyen BY, Bourdelle KK, Gyani J, Valenza M Solid-State Electronics, 65-66, 9, 2011 |
| 3 |
Monolithic integration of InP-based transistors on Si substrates using MBE Liu WK, Lubyshev D, Fastenau JM, Wu Y, Bulsara MT, Fitzgerald EA, Urteaga M, Ha W, Bergman J, Brar B, Hoke WE, LaRoche JR, Herrick KJ, Kazior TE, Clark D, Smith D, Thompson RF, Drazek C, Daval N Journal of Crystal Growth, 311(7), 1979, 2009 |
| 4 |
Engineering strained silicon on insulator wafers with the Smart Cut (TM) technology Ghyselen B, Hartmann JM, Ernst T, Aulnette C, Osternaud B, Bogumilowicz Y, Abbadie A, Besson P, Rayssac O, Tiberj A, Daval N, Cayrefourq I, Fournel F, Moriceau H, Di Nardo C, Andrieu F, Paillard V, Cabie M, Vincent L, Snoeck E, Cristiano F, Rocher A, Ponchet A, Claverie A, Boucaud P, Semeria MN, Bensahel D, Kernevez B, Mazure C Solid-State Electronics, 48(8), 1285, 2004 |
| 5 |
SiC power devices on QUASIC and SiCOI Smart-Cut (R) substrates: First demonstrations Letertre F, Daval N, Templier F, Bano E, Planson D, Di Ciocco L, Jalaguier E, Bluet JM, Billon T, Madar R, Chante JP Materials Science Forum, 433-4, 813, 2002 |