화학공학소재연구정보센터
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No. Article
1 A review of the mechanical stressors efficiency applied to the ultra-thin body & buried oxide fully depleted silicon on insulator technology
Morin P, Maitrejean S, Allibert F, Augendre E, Liu Q, Loubet N, Grenouillet L, Pofelski A, Chen KG, Khakifirooz A, Wacquez R, Reboh S, Bonnevialle A, le Royer C, Morand Y, Kanyandekwe J, Chanemougamme D, Mignot Y, Escarabajal Y, Lherron B, Chafik F, Pilorget S, Caubet P, Vinet M, Clement L, Desalvo B, Doris B, Kleemeier W
Solid-State Electronics, 117, 100, 2016
2 Thin-film devices for low power applications
Monfra S, Fenouillet-Beranger C, Bidal G, Boeuf F, Denorme S, Huguenin JL, Samson MP, Loubet N, Hartmann JM, Campidelli Y, Destefanis V, Arvet C, Benotmane K, Clement L, Faynot O, Skotnicki T
Solid-State Electronics, 54(2), 90, 2010
3 Gate-all-around technology: Taking advantage of ballistic transport?
Huguenin JL, Bidal G, Denorme S, Fleury D, Loubet N, Pouydebasque A, Perreau P, Leverd F, Barnola S, Beneyton R, Orlando B, Gouraud P, Salvetat T, Clement L, Monfray S, Ghibaudo G, Boeuf F, Skotnicki T
Solid-State Electronics, 54(9), 883, 2010
4 FDSOI devices with thin BOX and ground plane integration for 32 nm node and below
Fenouillet-Beranger C, Denorme S, Perreau P, Buj C, Faynot O, Andrieu F, Tosti L, Barnola S, Salvetat T, Garros X, Casse M, Allain F, Loubet N, Pham-Nguyen L, Deloffre E, Gros-Jean M, Beneyton R, Laviron C, Marin M, Leyris C, Haendler S, Leverd F, Gouraud P, Scheiblin P, Clement L, Pantel R, Deleonibus S, Skotnicki T
Solid-State Electronics, 53(7), 730, 2009
5 Folded fully depleted FET using Silicon-On-Nothing technology as a highly W-scaled planar solution
Bidal G, Loubet N, Fenouillet-Beranger C, Denorme S, Perreau P, Fleury D, Clement L, Laviron C, Leverd F, Gouraud P, Barnola S, Beneyton R, Torres A, Duluard C, Chapon JD, Orlando B, Salvetat T, Grosjean M, Deloffre E, Pantel R, Dutartre D, Monfray S, Ghibaudo G, Boeuf F, Skotnicki T
Solid-State Electronics, 53(7), 735, 2009