Thin-film devices for low power applications

Monfra S; Fenouillet-Beranger C; Bidal G; Boeuf F; Denorme S; Huguenin JL; Samson MP; Loubet N; Hartmann JM; Campidelli Y; Destefanis V; Arvet C; Benotmane K; Clement L; Faynot O; Skotnicki T

Solid-State Electronics, Vol.54, No.2, 90-96, 2010

DOI10.1016/j.sse.2009.12.013 Export Citation

Thin-film devices for low power applications

Monfra S, Fenouillet-Beranger C, Bidal G, Boeuf F, Denorme S, Huguenin JL, Samson MP, Loubet N, Hartmann JM, Campidelli Y, Destefanis V, Arvet C, Benotmane K, Clement L, Faynot O, Skotnicki T

Power consumption and matching are the principal issues at the 32 nm node and below In this context, Ultra-Thin Body devices are extensively studied for the end-of-roadmap CMOS In this paper we present thin-film technologies (FDSOI, LSOI and bulk+) leading to the integration of single gated thin films devices for 22 nm nodes and below. (C) 2009 Elsevier Ltcl All rights reserved

Keywords:FDSOI;SON;Ultra-Thin Body devices;Localized SOI;Bulk;Low power