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Effect of Background Pressure on Deposition Rate and Crystallinity of Deposited Silicon in Non-Equilibrium Plasma Jet CVD Nishida S, Nodo R, Muta H, Kuribayashi S KAGAKU KOGAKU RONBUNSHU, 41(2), 148, 2015 |
2 |
High-ohmic resistors fabricated by PureB layer for silicon drift detectors applications Golshani N, Derakhshandeh J, Beenakker CIM, Ishihara R Solid-State Electronics, 105, 6, 2015 |
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Carbon nanostructures grown on 3D silicon carbide foams: Role of intermediate silica layer and metal growth Ganiyu SA, Muraza O, Hakeem AS, Alhooshani K, Atieh MA Chemical Engineering Journal, 258, 110, 2014 |
4 |
Fundamental properties of a-SiNx: H thin films deposited by ICP-PECVD for MEMS applications Dergez D, Schalko J, Bittner A, Schmid U Applied Surface Science, 284, 348, 2013 |
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Improvement in Si active material particle performance for lithium-ion batteries by surface modification of an inductivity coupled plasma-chemical vapor deposition Shimoi N, Tanaka Y Electrochimica Acta, 80, 227, 2012 |
6 |
Low Output-Conductance InAs-Channel Metal-Oxide-Semiconductor Field-Effect Transistors with SiO2 Gate Dielectrics Ho HC, Fan TW, Lin HK Electrochemical and Solid State Letters, 14(8), H340, 2011 |
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Development of InAs/AlSb HEMTs Using Pre-Passivated as-Grown Epitaxies Lin HK, He WZ, Ho HC Journal of the Electrochemical Society, 158(10), H1062, 2011 |
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Silicidation and carburization of the tungsten filament in HWCVD with silacyclobutane precursor gases Shi YJ, Tong L, Eustergerling BD, Li XM Thin Solid Films, 519(14), 4442, 2011 |
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Optimization of organized silicon nanowires growth inside porous anodic alumina template using hot wire chemical vapor deposition process Lefeuvre E, Kim KH, He ZB, Maurice JL, Chatelet M, Pribat D, Cojocaru CS Thin Solid Films, 519(14), 4603, 2011 |
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Influence of the Deposition Temperature on the c-Si Surface Passivation by Al2O3 Films Synthesized by ALD and PECVD Dingemans G, van de Sanden MCM, Kessels WMM Electrochemical and Solid State Letters, 13(3), H76, 2010 |