화학공학소재연구정보센터
검색결과 : 57건
No. Article
1 Effect of Background Pressure on Deposition Rate and Crystallinity of Deposited Silicon in Non-Equilibrium Plasma Jet CVD
Nishida S, Nodo R, Muta H, Kuribayashi S
KAGAKU KOGAKU RONBUNSHU, 41(2), 148, 2015
2 High-ohmic resistors fabricated by PureB layer for silicon drift detectors applications
Golshani N, Derakhshandeh J, Beenakker CIM, Ishihara R
Solid-State Electronics, 105, 6, 2015
3 Carbon nanostructures grown on 3D silicon carbide foams: Role of intermediate silica layer and metal growth
Ganiyu SA, Muraza O, Hakeem AS, Alhooshani K, Atieh MA
Chemical Engineering Journal, 258, 110, 2014
4 Fundamental properties of a-SiNx: H thin films deposited by ICP-PECVD for MEMS applications
Dergez D, Schalko J, Bittner A, Schmid U
Applied Surface Science, 284, 348, 2013
5 Improvement in Si active material particle performance for lithium-ion batteries by surface modification of an inductivity coupled plasma-chemical vapor deposition
Shimoi N, Tanaka Y
Electrochimica Acta, 80, 227, 2012
6 Low Output-Conductance InAs-Channel Metal-Oxide-Semiconductor Field-Effect Transistors with SiO2 Gate Dielectrics
Ho HC, Fan TW, Lin HK
Electrochemical and Solid State Letters, 14(8), H340, 2011
7 Development of InAs/AlSb HEMTs Using Pre-Passivated as-Grown Epitaxies
Lin HK, He WZ, Ho HC
Journal of the Electrochemical Society, 158(10), H1062, 2011
8 Silicidation and carburization of the tungsten filament in HWCVD with silacyclobutane precursor gases
Shi YJ, Tong L, Eustergerling BD, Li XM
Thin Solid Films, 519(14), 4442, 2011
9 Optimization of organized silicon nanowires growth inside porous anodic alumina template using hot wire chemical vapor deposition process
Lefeuvre E, Kim KH, He ZB, Maurice JL, Chatelet M, Pribat D, Cojocaru CS
Thin Solid Films, 519(14), 4603, 2011
10 Influence of the Deposition Temperature on the c-Si Surface Passivation by Al2O3 Films Synthesized by ALD and PECVD
Dingemans G, van de Sanden MCM, Kessels WMM
Electrochemical and Solid State Letters, 13(3), H76, 2010