화학공학소재연구정보센터
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No. Article
1 Impact of Ge proportion on advanced SiGe bulk P-MOSFET matching performances
Rahhal L, Bajolet A, Cros A, Diouf C, Kergomard F, Rosa J, Bidal G, Bianchi RA, Ghibaudo G
Solid-State Electronics, 85, 15, 2013
2 Thin-film devices for low power applications
Monfra S, Fenouillet-Beranger C, Bidal G, Boeuf F, Denorme S, Huguenin JL, Samson MP, Loubet N, Hartmann JM, Campidelli Y, Destefanis V, Arvet C, Benotmane K, Clement L, Faynot O, Skotnicki T
Solid-State Electronics, 54(2), 90, 2010
3 Gate-all-around technology: Taking advantage of ballistic transport?
Huguenin JL, Bidal G, Denorme S, Fleury D, Loubet N, Pouydebasque A, Perreau P, Leverd F, Barnola S, Beneyton R, Orlando B, Gouraud P, Salvetat T, Clement L, Monfray S, Ghibaudo G, Boeuf F, Skotnicki T
Solid-State Electronics, 54(9), 883, 2010
4 Folded fully depleted FET using Silicon-On-Nothing technology as a highly W-scaled planar solution
Bidal G, Loubet N, Fenouillet-Beranger C, Denorme S, Perreau P, Fleury D, Clement L, Laviron C, Leverd F, Gouraud P, Barnola S, Beneyton R, Torres A, Duluard C, Chapon JD, Orlando B, Salvetat T, Grosjean M, Deloffre E, Pantel R, Dutartre D, Monfray S, Ghibaudo G, Boeuf F, Skotnicki T
Solid-State Electronics, 53(7), 735, 2009