화학공학소재연구정보센터
검색결과 : 10건
No. Article
1 Growth and characterization of broad spectrum infrared emitting GaInAsP/InP heterostructures
Rakovics V, Nadas J, Reti I, Ducso C, Battistig G
Journal of Crystal Growth, 468, 572, 2017
2 Orientation dependent growth of SiC nanocrystals at the SiO2/Si interface
Battistig G
Thin Solid Films, 520(6), 1973, 2012
3 Effect of deuterium on passivation of Si surfaces
Mizsei J, Pap AE, Gillemot K, Battistig G
Applied Surface Science, 256(19), 5765, 2010
4 RBS-channeling and EPR studies of damage in 2 MeV Al2+-implanted 6H-SiC substrates
Morilla A, Lopez JG, Battistig G, Cantin JL, Cheang-Wong JC, von Bardeleben HJ, Respaldiza MA
Materials Science Forum, 483, 291, 2005
5 Ion beam analysis and computer simulation of damage accumulation in nitrogen implanted 6H-SIC: Effects of channeling
Zolnai Z, Ster A, Khanh NQ, Kotai E, Posselt MH, Battistig G, Lohner T, Gyulai J
Materials Science Forum, 483, 637, 2005
6 Ion implantation-caused damage in SiC measured by spectroscopic ellipsometry
Petrik P, Shaaban ER, Lohner T, Battistig G, Fried M, Lopez JG, Morilla Y, Polgar O, Gyulai J
Thin Solid Films, 455-56, 239, 2004
7 High-sensitivity ion beam analytical method for studying ion-implanted SiC
Battistig G, Lopez JG, Khanh NQ, Morilla Y, Respaldiza MA, Szilagyi E
Materials Science Forum, 433-4, 625, 2002
8 Ion bombardment induced damage in silicon carbide studied by ion beam analytical methods
Szilagyi E, Khanh NQ, Horvath ZE, Lohner T, Battistig G, Zolnai Z, Kotai E, Gyulai J
Materials Science Forum, 353-356, 271, 2001
9 Swift heavy ion irradiation effects in SiC measured by positrons
Liszkay L, Havancsak K, Barthe MF, Desgardin P, Henry L, Kajcsos Z, Battistig G, Szilagyi E, Skuratov VA
Materials Science Forum, 363-3, 123, 2001
10 Spinodal decomposition in a subsurface layer of a polymer blend film
Heier J, Kramer EJ, Revesz P, Battistig G, Bates FS
Macromolecules, 32(11), 3758, 1999