검색결과 : 10건
No. | Article |
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1 |
Growth and characterization of broad spectrum infrared emitting GaInAsP/InP heterostructures Rakovics V, Nadas J, Reti I, Ducso C, Battistig G Journal of Crystal Growth, 468, 572, 2017 |
2 |
Orientation dependent growth of SiC nanocrystals at the SiO2/Si interface Battistig G Thin Solid Films, 520(6), 1973, 2012 |
3 |
Effect of deuterium on passivation of Si surfaces Mizsei J, Pap AE, Gillemot K, Battistig G Applied Surface Science, 256(19), 5765, 2010 |
4 |
RBS-channeling and EPR studies of damage in 2 MeV Al2+-implanted 6H-SiC substrates Morilla A, Lopez JG, Battistig G, Cantin JL, Cheang-Wong JC, von Bardeleben HJ, Respaldiza MA Materials Science Forum, 483, 291, 2005 |
5 |
Ion beam analysis and computer simulation of damage accumulation in nitrogen implanted 6H-SIC: Effects of channeling Zolnai Z, Ster A, Khanh NQ, Kotai E, Posselt MH, Battistig G, Lohner T, Gyulai J Materials Science Forum, 483, 637, 2005 |
6 |
Ion implantation-caused damage in SiC measured by spectroscopic ellipsometry Petrik P, Shaaban ER, Lohner T, Battistig G, Fried M, Lopez JG, Morilla Y, Polgar O, Gyulai J Thin Solid Films, 455-56, 239, 2004 |
7 |
High-sensitivity ion beam analytical method for studying ion-implanted SiC Battistig G, Lopez JG, Khanh NQ, Morilla Y, Respaldiza MA, Szilagyi E Materials Science Forum, 433-4, 625, 2002 |
8 |
Ion bombardment induced damage in silicon carbide studied by ion beam analytical methods Szilagyi E, Khanh NQ, Horvath ZE, Lohner T, Battistig G, Zolnai Z, Kotai E, Gyulai J Materials Science Forum, 353-356, 271, 2001 |
9 |
Swift heavy ion irradiation effects in SiC measured by positrons Liszkay L, Havancsak K, Barthe MF, Desgardin P, Henry L, Kajcsos Z, Battistig G, Szilagyi E, Skuratov VA Materials Science Forum, 363-3, 123, 2001 |
10 |
Spinodal decomposition in a subsurface layer of a polymer blend film Heier J, Kramer EJ, Revesz P, Battistig G, Bates FS Macromolecules, 32(11), 3758, 1999 |