The combination of Backscattering Spectrometry and channeling with the C-12(alpha,alpha)C-12 nuclear resonance at 4.26 MeV to study radiation damage in the carbon sublattice of 6H-SiC was applied. 6H SiC samples were implanted with 200 keV Al ions in a dose range of 4 x 10(14) cm(-2) - 1 x 10(16) cm(-2) with different current densities at room temperatures. The implanted samples were annealed at 1200degreesC in argon for 1 hour. In the case of low dose, low current density implantation damage recovery seems to be complete.