화학공학소재연구정보센터
Thin Solid Films, Vol.455-56, 239-243, 2004
Ion implantation-caused damage in SiC measured by spectroscopic ellipsometry
Since ion implantation-caused damage changes the complex refractive index of SiC significantly, optical methods can be used to measure the sample properties sensitively, non-destructively and quickly. In the present work the damage created by ion implantation into SiC and its change upon annealing was characterized by spectroscopic ellipsometry (SE). 4H SiC samples were implanted with 150 keV Al using doses between 4 X 10(14) and 2 X 10(15) cm(-2) with current densities from 0.4 to 2.5 muA cm(-2) . They were subsequently annealed at 1100 degreesC in Ar for 1 h. SE measurements were made before and after annealing. The relative damage was measured using the Bruggeman effective medium approximation combining the dielectric function of single-crystalline and totally amorphized SiC. Therefore, the prerequisite of the proper interpretation of SE data measured on partially damaged SiC is the knowledge of the complex dielectric function of single-crystalline and completely ion implantation amorphized SiC. The complex dielectric function of ion implantation-amorphi zed SiC was determined from a high-dose implant. Different optical models and the influence of experimental conditions on the damage were investigated. The results were crosschecked by Rutherford backscattering spectrometry. (C) 2004 Elsevier B.V. All rights reserved.