| 1 |
Properties of Ga2O3(Gd2O3)/GaN metal-insulator-semiconductor diodes
Hong M, Anselm KA, Kwo J, Ng HM, Baillargeon JN, Kortan AR, Mannaerts JP, Cho AY, Lee CM, Chyi JI, Lay TS
Journal of Vacuum Science & Technology B, 18(3), 1453, 2000 |
| 2 |
GaInAsP/InP distributed feedback lasers grown directly on grated substrates by solid-source molecular beam epitaxy
Hwang WY, Baillargeon JN, Chu SNG, Sciortino PF, Cho AY
Journal of Vacuum Science & Technology B, 16(3), 1422, 1998 |
| 3 |
All-Solid Source Molecular-Beam Epitaxy Growth of GaxIn1-Xasyp1-Y/InP Lasers Using Phosphorus and Arsenic Valved Cracking Cells
Baillargeon JN, Cheng KY, Cho AY, Chu SN
Journal of Vacuum Science & Technology B, 14(3), 2244, 1996 |
| 4 |
Evaluation of the Performance and Operating Characteristics of a Solid Phosphorus Source Valved Cracking Cell for Molecular-Beam Epitaxy Growth of III-V Compounds
Baillargeon JN, Cho AY, Fischer RJ
Journal of Vacuum Science & Technology B, 13(1), 64, 1995 |
| 5 |
Molecular-Beam Epitaxial-Growth of GaxIn1-Xp-GaAs (X-Similar-to-0.5) Double-Heterojunction Laser-Diodes Using Solid Phosphorus and Arsenic Valved Cracking Cells
Baillargeon JN, Cho AY
Journal of Vacuum Science & Technology B, 13(2), 736, 1995 |
| 6 |
Electrical Characteristics of InP Grown by Molecular-Beam Epitaxy Using a Valved Phosphorus Cracking Cell
Baillargeon JN, Cho AY, Fischer RJ, Pearah PJ, Cheng KY
Journal of Vacuum Science & Technology B, 12(2), 1106, 1994 |
