The electrical characteristics of InP grown by molecular beam epitaxy (MBE) using a valved phosphorus cracking cell are presented. Stoichiometric growth of InP was achieved with a beam equivalent pressure as low as 5 X 10(-7) Torr and 1 mum/h InP growth rate. The efficiency of the solid source is high, consuming on average only approximately 0.09 g of phosphorus per mum of InP growth with the beam equivalent pressure approximately 1.5 X 10(-6) Torr. The conductivity of the unintentionally doped layers is n-type, with the electrical background concentration primarily dependent upon the valved cell cracking zone temperature. Electrical carrier concentrations at 300 K ranged from 2.9 X 10(15) cm-3 to 3.3 X 10(16) cm-3. The lowest backgrounds were achieved with the lowest cracking zone temperatures. Low temperature photoluminescence shows impurity related emission at 1.383 eV.