| 1 |
Fabrication of n-type Schottky barrier thin-film transistor with channel length and width of 0.1 mu m and erbium silicide source/drain
Yang JH, Ahn CG, Baek IB, Jang MG, Sung GY, Park BC, Im K, Lee S
Thin Solid Films, 517(5), 1825, 2009 |
| 2 |
Three-dimensionally stacked poly-Si TFT CMOS inverter with high quality laser crystallized channel on Si substrate
Oh SY, Ahn CG, Yang JH, Cho WJ, Lee WH, Koo HM, Lee SJ
Solid-State Electronics, 52(3), 372, 2008 |
| 3 |
Electron beam lithography patterning of sub-10 nm line using hydrogen silsesquioxane for nanoscale device applications
Baek IB, Yang JH, Cho WJ, Ahn CG, Im K, Lee S
Journal of Vacuum Science & Technology B, 23(6), 3120, 2005 |
| 4 |
Plasma doping technology for fabrication of nanoscale metal-oxide-semiconductor devices
Cho WJ, Im K, Ahn CG, Yang JH, Oh J, Baek IBO, Lee S
Journal of Vacuum Science & Technology B, 22(6), 3210, 2004 |
| 5 |
Ge layer transfer to Si for photovoltaic applications
Zahler JM, Ahn CG, Zaghi S, Atwater HA, Chu C, Iles P
Thin Solid Films, 403-404, 558, 2002 |
| 6 |
Effect of high-temperature annealing on deep levels in thin silicon-on-insulator layers separated by implanted oxygen
Kang BK, Kang HS, Ahn CG, Kwon YK
Journal of the Electrochemical Society, 146(9), 3489, 1999 |
| 7 |
Method for measuring deep levels in thin silicon-on-insulator layer without any interface effects
Kang HS, Ahn CG, Kang BK, Kwon YK
Journal of the Electrochemical Society, 145(10), 3581, 1998 |
