We have successfully used hydrophobic direct-wafer bonding, along with H-induced layer splitting of Ge, to transfer 700-nmthick. single-crystal Ge (100) films to Si (100) substrates without using a metallic bonding layer. The metal-free nature of the bond makes the bonded wafers suitable for subsequent epitaxial growth of triple-junction GalnP/GaAs/Ge solar cell structures at high temperatures, without concern about metal contamination of the active region of the device. Contact-mode atomic force microscopy images of the transferred Ge surface generated by hydrogen-induced layer-splitting reveals root mean square (rms) surface roughness of between 10 and 23 nm. Electrical measurements indicate ohmic I-V characteristics for as-bonded Ge layers bonded to silicon substrates with similar to400 Omega cm(-2) resistance at the interface. Triple-junction solar cell structures grown on these Ge/Si heterostructure templates by metal-organic chemical vapor deposition show comparable photoluminescence intensity and minority carrier lifetime to a control structure grown on bulk Ge. An epitaxial Ge buffer layer is grown to smooth the cleaved surface of the Ge heterostructure and reduces the rms surface roughness from similar to11 to as low as 1.5 nm. with a mesa-like morphology that has a top surface roughness of under 1.0 nm, providing a promising surface for improved GaAs growth.