| 학회 | 한국재료학회 |
| 학술대회 | 2018년 가을 (11/07 ~ 11/09, 여수 디오션리조트) |
| 권호 | 24권 2호 |
| 발표분야 | G. 나노/박막 재료 분과 |
| 제목 | Air Void Formation on Patterned Sapphire Substrate using Photoresist Carbonization Process |
| 초록 | In this study, method of forming air voids on patterned sapphire substrate using photoresist to improve the light extraction enhancement of light emitting diodes was studied. It was found that GaN grown on patterned sapphire substrate was grown on a specific plane such as n surface and c surface over time. In order to select and grow the desired surface during GaN deposition, a photoresist carbonization process can be used to suppress the c-plane in the patterned sapphire substrate and form an air void by growing GaN on the n-plane. The contact angle measurement was performed to analyze the cause of growth on a specific plane in a patterned sapphire substrate. |
| 저자 | 강성호, 정우섭, 조승희, 고현아, 이두원, 안민주, 심규연, 변동진 |
| 소속 | 고려대 |
| 키워드 | Gallium Nitride; Photoresist carbonization process; Patterned sapphire susbstrate; |
