| 학회 | 한국재료학회 |
| 학술대회 | 2016년 봄 (05/18 ~ 05/20, 여수 디오션리조트 ) |
| 권호 | 22권 1호 |
| 발표분야 | G. 나노/박막 재료 분과 |
| 제목 | The sulfur annealing effect of WCN thin film by atomic layer deposition |
| 초록 | Recently, transition metal dichalcogenides (TMDCs) have been studied as alternatives of graphene. TMDCs have stoichiometry of MX2 which consists of transition metal (M = Mo, W, or Nb) sandwiched between two layers of chalcogen atoms (X = S, Se or Te) and are layered materials with strong in-plane covalent bonding between metal–chalcogen and weak out-of-plane van der Waals bonding between layers. These materials have attracted significant attention due to their outstanding potential for use in various nano-electronic applications. Among various TMDCs, tungsten disulfide(WS2) has been intensely studied due to their superior properties for candidates of next-generation electronic and optoelectronic application. WS2 is typical semiconducting TMDCs with optical and electronic properties, such as indirect-to-direct band gap transition according to reducing the number of WS2 layer (1.4 eV for monolayer and 2.0 eV for bulk), high carrier mobility, and strong spin-orbit coupling. These properties permit next-generation of nano-electronic applications. In this study, we synthesized WS2 thin film on SiO2 substrates by sulfur annealing of a WNC thin film. WNC thin film was deposited by remote plasma atomic layer deposition (RPALD) using (MeCp)W(CO)2(NO) as a tungsten source and NH3 plasma as a nitrogen source. ALD method has advantages such as thickness controllability, wafer-scale thickness uniformity and high conformality. To synthesize WS2, we carried out sulfur annealing process at various conditions. WS2 thin films were analyzed by X-ray diffraction (XRD), Raman Spectroscopy, X-ray photoelectron spectroscopy (XPS), and Transmission Electron Microscope (TEM). More results will be presented in meeting. |
| 저자 | 이승진, 신석윤, 함기열, 박주현, 김현정, 이주현, 최형수, 전형탁 |
| 소속 | 한양대 |
| 키워드 | WS<SUB>2</SUB>; 2-D materials; ALD; annealing |
