| 학회 | 한국재료학회 |
| 학술대회 | 2017년 봄 (05/17 ~ 05/19, 목포 현대호텔) |
| 권호 | 23권 1호 |
| 발표분야 | G. 나노/박막 재료 분과 |
| 제목 | Characteristics of Field Effect Transistor of Tin Disulfide Deposited by Atomic Layer Deposition at Low Temperatures |
| 초록 | Since the single layer graphene was discovered, there have been a lot of active researches on 2D materials because of its unique material properties, which is applicable to future flexible transistor and energy devices. Among these 2D materials, graphene is the extensively researched because of its high carrier mobility and transmittances. However, it has a zero bandgap in pristine form without functionalization or structural modification like a ribbon shape, resulting in poor transistor performance. In order to solve these problems, layered metal dichalcogenides (LMDs), such as 2D MoS2 and WS2 has been researched as a channel layer for thin film transistors due to its suitable electrical properties. Tin disulfide (SnS2) is an n-type semiconducting layered material that has a hexagonal CdI2-type structure. Similar to other LMDs materials, SnS2 composed of tin is sandwiched between two sulfur layers with strong covalent bonding, whereas each monolayer is connected with weak van der Waals bonding. According to a previous report, a transistor using SnS2 as a channel material fabricated by a mechanical exfoliated method showed outstanding properties, with a high electrical carrier mobility of ~230cm2V-1s-1 and an on/off ratio ＞106. In addition, it was reported that SnS2 has been synthesized by a chemical vapor transport method at 620-680°C. However, in order to apply SnS2 in future electronic devices, especially flexible, wearable ones, it must be synthesized over a large area with high crystallinity at low temperatures. Low-temperature processes for the synthesis of LMDs such as SnS2 have not yet been thoroughly researched. In this study, we investigated the transistor characteristics of multi-layered SnS2 which is deposited at 100 °C and step annealed from 100°C to 350 °C. Firstly, we will demonstrate physical and electrical characteristics of ALD-grown multilayered SnS2 field-effect transistors (FETs) at low temperatures. The properties of annealed and as-deposited SnS2 were analyzed by XRD, RAMAN, TEM, XPS. And the transistors using few layers of SnS2 were fabricated and their electrical properties were investigated. |
| 저자 | 이주현, 함기열, 신석윤, 최형수, 이남규, 전형탁 |
| 소속 | 한양대 |
| 키워드 | ALD; low temperatures; tin disulfide |
