| 학회 | 한국재료학회 |
| 학술대회 | 2008년 가을 (11/07 ~ 11/07, 차세대융합기술연구원) |
| 권호 | 14권 2호 |
| 발표분야 | 전자재료 |
| 제목 | Ruthenium Thin Films Grown by Atomic Layer Deposition |
| 초록 | Ruthenium is one of the noble metals having good thermal and chemical stability, low resistivity, and relatively high work function. Because of these good physical, chemical, and electrical properties, Ru thin films have been extensively studied for various applications in semiconductor devices such as gate electrode for FET, capacitor electrodes for dynamic random access memories(DRAMs) with high-k dielectrics such as Ta2O5 and (Ba,Sr)TiO3, and capacitor electrode for ferroelectric random access memories(FRAMs) with Pb(Zr,Ti)O3. Additionally, Ru thin films have been studied for copper(Cu) seed layers for Cu electrochemical plating(ECP) in metallization process because of its good adhesion to and immiscibility with Cu. We investigated Ru thin films by thermal ALD with various deposition parameters such as deposition temperature, oxygen flow rate, and source pulse time. Ru thin films were grown by ALD(Lucida M100-PL, NCD Co.) using RuDi as precursor and O2 gas as a reactant at 200~350oC. |
| 저자 | Woong-Chul Shin1, Kyu-Jeong Choi1, Hyun-June Jung2, Soon-Gil Yoon3, Soo-Hyun Kim2 |
| 소속 | 1NCD Technology, 2School of Nano Science and Engineering, 3Chungnam National Univ. |
| 키워드 | ALD; Ru; Electrode; Cu; Seed layer |
