| 학회 |
한국재료학회 |
| 학술대회 |
2014년 봄 (05/15 ~ 05/16, 창원컨벤션센터) |
| 권호 |
20권 1호 |
| 발표분야 |
A. 전자/반도체 재료(Electronic and Semiconductor Materials) |
| 제목 |
Atomic layer deposition for advanced Cu metallization |
| 초록 |
Recently, with the scaling down of the semiconductor devices, the applications of atomic layer deposition (ALD) has drawn a lot of interest due to its inherent benefits compared to other thin film deposition techniques. The key advantages of ALD are atomic level controlled growth and conformal growth on high aspect ratio substrates. Another important characteristic of ALD is its ability to control composition at the atomic level and to modulate composition in a precise manner. In this presentation, I will briefly explain the works by the presenter, which are related to the applications of ALD into advanced Cu metallization. It includes ALD-TaCx as a diffusion barrier against Cu using novel nitrogen-free precursor, ALD-Ru as a seed layer for Cu electroplating using novel zero-valent precursors, ALD-RuAlO as a Cu direct-plateable diffusion barrier. Special emphasis on both the rigorous selection of the precursors and process development is put for the successful application of ALD for the semiconductor devices fabrication. |
| 저자 |
Soo-Hyun Kim |
| 소속 |
School of Materials Science and Engineering |
| 키워드 |
Atomic layer deposition; diffusion barrier; seed layer; direct plating; Cu metallization; metaorganic precursor; TaC; Ru; RuAlO
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| E-Mail |
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