| 초록 |
As the rapid progress in the semiconductor industry, the high density plasma enhanced process is required for more advanced semiconductor process. The materials for the plasma processing chamber require high plasma resistance, low generation of particles and high corrosion resistance to a corrosive gas. The quartz has been commercially used as a material for the plasma chamber. However it is necessary to develop the material which has higher plasma resistance than quart. Oxynitride glasses in Y-Si-Al-O-N glass system were prepared with melting the mixture of SiO2, Y2O3, Al2O3 and Si3N4 as a nitrogen source at nitrogen atmosphere using Mo crucible. The crystal phase of manufactured specimens was identified using XRD and their characteristics were analyzed using DTA, dilatometer, nanoindenter, Archimedes method and plasma etching test. Chemical composition of specimens was determined using EPMA and ESCA and the glass structure has studied using FT-IR spectroscopy. The glass transition temperature, softening temperature, hardness, elastic modulus and density were increased with the content of nitrogen in the glasses. From the plasma etching test, the specimens showed approximately 5 times higher plasma resistance than the quartz reference material. The purpose of this study is to develop the plasma resistance material which has high plasma resistance and no grain boundary to prevent the contamination by particles. |
