| 학회 |
한국화학공학회 |
| 학술대회 |
2003년 봄 (04/25 ~ 04/26, 순천대학교) |
| 권호 |
9권 1호, p.1063 |
| 발표분야 |
재료 |
| 제목 |
Abnormal oxidation of cobalt silicide on arsenic implanted N+ active areas |
| 초록 |
During the deposition process of silicon oxide, we found an unexpected oxide growth on a CoSi2 layer in an arsenic-doped N+ active area, showing the degradation of contact resistance in this area. The role of arsenic was investigated in order to explain its effects on the abnormal oxidation. This abnormal oxidation was caused by the out-diffusion of silicon atoms from the substrate and was readily influenced by the concentration of arsenic in the silicon substrate and by heat treatment enhancing the out-diffusion of arsenic. |
| 저자 |
이원규1, 조일현2
|
| 소속 |
1강원대, 2하이닉스반도체(주) 시스템 IC (연) |
| 키워드 |
cobalt silicide; abnormal oxidation; arsenic
|
| E-Mail |
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| 원문파일 |
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