| 학회 | 한국재료학회 |
| 학술대회 | 2017년 가을 (11/15 ~ 11/17, 경주 현대호텔) |
| 권호 | 23권 2호 |
| 발표분야 | G. 나노/박막 재료 분과 |
| 제목 | Epitaxy growth of α-Ga2O3 films on A-plane sapphire substrates by plasma-assisted molecular beam epitaxy |
| 초록 | Ga2O3 has attracted much attention due to its outstanding optical and electronic properties such as its wide bandgap. The Ga2O3 thin film is a potential candidate for applications as deep-UV photodetectors, high-power devices and transparent electronic devices. Ga2O3 has five different polymorphs including α, β, γ, δ and ε phases. Among them, monoclinic structured β-Ga2O3 is known is the most stable. However, there has been unfavorable in finding an appropriate substrates materials for epitaxy growth of β-Ga2O3 films. Until now, sapphire is popular substrate has been used for heteroepitaxy growth. However, the differences in crystal structures between β-Ga2O3 and this substrates have obstructed the growth of high quality β-Ga2O3. In contrast, the metastable α-Ga2O3 has the same structure with sapphire which is beneficial in epitaxy growth. In our experiment, we grow Ga2O3 films on A-plane sapphire substrates by plasma-assisted molecular beam epitaxy with various growth temperature. The growth process is monitored by in-situ reflection high-energy electron diffraction (RHEED). The influence of the growth temperature on the surface morphology and roughness of films are investigated by atomic force microscope (AFM). The crystal structure of films is characterized by X-ray diffraction (XRD). The optical transmittance spectra were measured by a UV-vis spectrophotometer. The epitaxial α-Ga2O3 film was successfully grown on A-plane sapphire substrates at 900 oC. The RMS roughness on 2x2 µm2 area of the α-Ga2O3 film was less than 1 nm. The bandgap of of the α-Ga2O3 was about 5.37 eV. |
| 저자 | Trong Si Ngo1, Duc Duy Le2, Soon-Ku Hong1 |
| 소속 | 1Department of Materials Science and Engineering, 2Chungnam National Univ. |
| 키워드 | α-Ga<SUB>2</SUB>O<SUB>3</SUB>; molecular beam epitaxy; a-plane sapphire |
