| 학회 |
한국화학공학회 |
| 학술대회 |
2008년 봄 (04/23 ~ 04/25, 제주ICC) |
| 권호 |
14권 1호, p.1252 |
| 발표분야 |
재료 |
| 제목 |
Electrical properties of ZnO nanowires based field effect transistors fabricated by top-gate and back-gate approaches |
| 초록 |
A comparison between the electrical properties of ZnO nanowire based field effect transistors fabricated by top-gate and back-gate approaches has been presented in this paper. The field-effect transistors were fabricated by electron-beam lithography and photolithography process using ZnO nanowires grown by thermal evaporation process. The electrical properties of the fabricated ZnO nanowire based FETs were examined by Vds-Ids and Vgs-Ids measurements. A good contact between ZnO nanowires and Ti/Au metal electrodes was achieved for the fabricated FETs. It was observed that the peak transconductance for the fabricated top-gate ZnO FETs was 162 ns while the peak transconductance for the back-gate based ZnO FETs was 92 ns. The field effect mobilities (µeff) for the top gated and back gated based ZnO nanowires FETs were 72 and 7.1 cm2/V-s, respectively. Our approaches present that the top-gate ZnO nanowires FETs have good electrical characteristics as compared to the back-gated ZnO nanowires FETs. |
| 저자 |
박용규, Umar Ahmad, 김상훈, 김진석, 모하메드바즘, 한윤봉
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| 소속 |
전북대 |
| 키워드 |
ZnO nanowires; Field effect transistors (FETs)
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| E-Mail |
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| 원문파일 |
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