| 학회 |
한국재료학회 |
| 학술대회 |
2021년 가을 (11/24 ~ 11/26, 경주 라한호텔) |
| 권호 |
27권 2호 |
| 발표분야 |
F. 광기능/디스플레이 재료 분과 |
| 제목 |
The development of SiO2 hole pattern fabrication using photoresist without etching for the selective area growth of GaN |
| 초록 |
There are lots of methods to fabricating the hole patterns under micro size such as E-beam lithography, photolithography and etc. Many researchers use various methods as needed, but with the advancement of photolithography, photolithography is mainly used to fabricate hole patterns. As the hole pattern became smaller, it was confirmed that there was an unwanted problem such as the arago spot and under cut. We demonstrate the method to fabricate the hole pattern under micro size using photolithography without etching process and the correlation between various variables when using the photolithography method. We used photolithography using the i-line mask aligner (MDA-400s) with the positive photoresist. And we figure out the result through the scanning electron microscopy, atomic force microscopy and x-ray diffraction method. |
| 저자 |
안민주, 변동진, 심규연, 강성호, 김효종, 김화영
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| 소속 |
고려대 |
| 키워드 |
photolithography; lift-off
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| E-Mail |
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