| 학회 |
한국공업화학회 |
| 학술대회 |
2006년 봄 (05/12 ~ 05/13, 전북대학교) |
| 권호 |
10권 1호 |
| 발표분야 |
고분자 |
| 제목 |
High Performance Resists for Sub-100 nm EUV Lithographic Patterning |
| 초록 |
Poly[4-hydroxystyrene-co-2-(4-methoxybutyl)-2-adamantyl methacrylate] was synthesized and evaluated as a new extreme UV (EUV) chemically amplified resist. Incorporation of 2-(4-methoxybutyl)-2-adamantyl groups as protecting groups in the matrix polymers enabled enhanced dry-etch resistance, and excellent lithographic performance was obtained. The resist system formulated with this polymer resolved 120 nm line and space patterns using a KrF excimer laser scanner (0.60 NA), and 50 nm line patterns (pitch 180 nm) using an EUV lithography tool. The dry-etch resistance of this resist for a CF4-based plasma was 1.1 times higher than that of poly(4-hydroxystyrene). |
| 저자 |
최재학1, 노영창1, 홍성권2
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| 소속 |
1한국원자력(연), 2충남대 |
| 키워드 |
EUV lithography; Resist; Adamantyl methacrylate
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| E-Mail |
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