| 초록 |
Chemically amplified (CA) photoresists have received much attention due to their high sensitivity and other advantageous lithographic characteristics. We have prepared poly(oxyethylene) and polysiloxane derivatives for photoresists for EUV lithography. Poly(oxyethylene) and polysiloxane can have advantages in lithographic process due to high transparency and good adhesion on silicone wafer or other inorganic substances, while these polymers have poor thermal and mechanical properties such as low glass transition temperature, low decomposition temperature, and poor etching resistance. To overcome these disadvantages, we have synthesized poly(oxyethylene) and polysiloxane derivatives containing polyhedral oligomeric silsesquioxane(POSS) which has been known to enhance mechanical and thermal properties. The poly(oxyethylene) derivatives were prepared via ring-opening polymerization from various oxyethylene monomers containing different functional groups. The polysiloxane derivatives were obtained via hydrosilylation reaction of poly(methylhydrosiloxane) with various vinyl-terminated esters containing different functional groups in the presence of platinum catalyst. |
