| 학회 | 한국재료학회 |
| 학술대회 | 2018년 가을 (11/07 ~ 11/09, 여수 디오션리조트) |
| 권호 | 24권 2호 |
| 발표분야 | A. 전자/반도체 재료 분과 |
| 제목 | Characteristics of SiNx thin films by Remote Plasma Atomic Layer Deposition using DTDN2-H2 precursor |
| 초록 | Silicon Nitride(SiNx) is the promising material for semiconductor devices due to its excellent electrical properties, oxygen-blocking properties and hydrolytic stability for acid. There are many applications of SiNx such as gate dielectric, etch stop layer, charge trap layer and gate spacer. Among them, gate spacer needs rigorous process conditions to avoid interfacial reaction in high k metal gate stack. For conventional method to deposit SiNx, low pressure chemical vapor deposition(LPCVD) has problem with high process temperature, and plasma enhanced chemical vapor deposition(PECVD) can lower process temperature than LPCVD but there are problems in etch resistance and step coverage. Therefore, Atomic layer deposition(ALD) method has advantages due to the low deposition temperature, excellent step coverage and outstanding thickness control based on self-limiting mechanism. Furthermore, use of N2 as a reactant can make better wet etch resistance of SiNx thin films than of conventional SiNx using NH3, due to the less occurrence of hydrogen content in the SiNx film. In this presentation, SiNx films were deposited by remote plasma atomic layer deposition(RPALD) using the novel bis[dimethylaminomethyl-silyl]trimethylsilyl amine(DTDN2-H2) precursor and N2 plasma as a reactant. The characteristics of SiNx thin films were examined as a function of deposition temperature and plasma power. The films were deposited at the temperature range from 100 to 500 °C and plasma power range from 300 to 1000 W, respectively. The growth rate and binding energy state showed little difference depending on the plasma power. The better leakage current density and etch resistance were obtained at higher deposition temperature and higher plasma power. |
| 저자 | 임경필, 전형탁, 김현준, 정찬원, 조해원 |
| 소속 | 한양대 |
| 키워드 | Gate Spacer; Remote Plasma Atomic Layer Deposition; DTDN2-H2 |
