| 학회 |
한국재료학회 |
| 학술대회 |
2021년 봄 (05/12 ~ 05/14, 광주 김대중컨벤션센터) |
| 권호 |
27권 1호 |
| 발표분야 |
G. 나노/박막 재료 분과 |
| 제목 |
Study on the characteristics of AlN buffer layer deposited with RF-Magnetron sputter for GaN growth |
| 초록 |
When growing GaN directly on a sapphire substrate, it is difficult to grow excellent GaN due to a lattice mismatch between the GaN layer and the sapphire substrate and a difference in thermal expansion coefficient. AlN is mainly studied as a buffer layer to reduce the problems between the GaN layer and the sapphire substrate. In this study, the characteristics of the AlN buffer layer to grow an excellent GaN epitaxial layer were studied. As the AlN buffer layer deposited on the C-plane sapphire substrate, RF-magnetron sputter was used, and temperature was used as a variable. XRD and SEM AFM were used to analyze the properties of the deposited AlN buffer layer. |
| 저자 |
강성호, 정우섭, 안민주, 심규연, 김효종, 변동진
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| 소속 |
고려대 |
| 키워드 |
<P>RF-magnetron sputter; AlN; Aluminium nitride</P>
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| E-Mail |
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