| 학회 | 한국화학공학회 |
| 학술대회 | 2008년 봄 (04/23 ~ 04/25, 제주ICC) |
| 권호 | 14권 1호, p.1148 |
| 발표분야 | 재료 |
| 제목 | Electrical properties of Zr-doped TiO2 thin films for DRAM capacitors |
| 초록 | TiO2 is one of the most promising materials for high dielectric thin film because it has an exceptionally high-k value. (anatase: 30-40, rutile: 90-170) But, the crystalline TiO2 film has poor leakage current characteristics for dynamic random access memory capacitor. In this work, we made the rutile TiO2 thin film on RuO2 substrate using atomic layer deposition because the RuO2 has an almost identical lattice distance in the rutile crystal structure to that of the rutile TiO2. And, we can solve poor leakage current characteristics by Zr-doping in the TiO2 thin film. After post-annealing of 20 nm thick TiO2 film at 400 ℃, the dielectric constant and the leakage current density were estimated to be ~60 and ~10-5 A/cm2, respectively. For the reduction of the leakage current density, a small amount of Zr was doped into TiO2 film. The chemical composition of the Zr-doped TiO2 thin films was confirmed to be Zr0.5Ti4.5O10 by taking depth profiles of AES peaks. After post-annealing of the Zr-doped TiO2 thin films, dielectric constants decreased to ~40 and the leakage current densities decreased ~10-5 A/cm2. |
| 저자 | 권 혁, 박현희, 하정숙 |
| 소속 | 고려대 |
| 키워드 | TiO2; Atomic layer deposition |
| 원문파일 | 초록 보기 |
