| 학회 | 한국재료학회 |
| 학술대회 | 2009년 가을 (11/05 ~ 11/06, 포항공과대학교) |
| 권호 | 15권 2호 |
| 발표분야 | A. Information Processing and Sensing(정보소재 및 센서) |
| 제목 | A study on the improvement of retention property in metal-ferroelectric-insulator-semiconductor structure |
| 초록 | Recent developments in the area of electronic devices utilizing complex oxide thin films include ferroelectric non-volatile memory. There are two competing ideas regarding structures for ferroelectric memory. One consists of a FE storage capacitor and pass-gate transistor; the other has only one transistor in which a ferroelectric layer is embedded. This study includes metal-ferroelectric-insulator-semiconductor field effect transistors (MFISFET). This type of memory could make possible non-destructive read-out and high-density non-volatile memory that has a theoretical ideal drive method. However, MFIS structures have difficult major problems of two types that divide into retention and disturb. The problem has not dissolved though so many researches until now. Improvement of retention property must be required a first for non-volatile MFISFET memory. Cause of reduction in retention time divide into depolarization field and leakage current by insulator layer. If the permittivity of the buffer layer differs greatly from that of the ferroelectric film, ferroelectric layer receive greatly depolarization field and most of applied voltage drop occurs across the buffer layer. As a result, sufficient electric field is not applied to the ferroelectric layer for polarization reversal. And charge of leakage current reward polarization of ferroelectric layer through insulator layer. From the point of view described above, in this study MFIS structure was fabricated by Nd2Ti2O7 ferroelectric film and HfO2 insulator for improvement of retention property through ferroelectric layer of low permittivity, high coercive field and insulator layer of high dielectric constant, stability with silicon. This study analysis about the retention property from Pt/Nd2Ti2O7/HfO2/Si(100) structure. |
| 저자 | 이홍섭1, 박형호1, 황윤택2 |
| 소속 | 1연세대, 2(주)하이닉스반도체 |
| 키워드 | FeFET; FeRAM; ferroelectric; MFIS; retention |
