| 학회 |
한국고분자학회 |
| 학술대회 |
2004년 봄 (04/09 ~ 04/10, 고려대학교) |
| 권호 |
29권 1호, p.205 |
| 발표분야 |
분자전자 부문위원회 |
| 제목 |
Negative Tone Resist Material Based on Polyhedral Oligomeric Silsesquioxane for 193 nm Lithography |
| 초록 |
The fabrication of increasingly smaller feature size for integrated circuits requires advanced lithographic techniques with high resolution. Recently 193 nm optical lithography gains much importance because of it’s potential application in semiconductor industries. Here we report a novel negative tone molecular resist based on Polyhedral Oligomeric Silsesquionxane (POSS). POSS is a highly versatile material which can be easily functionalized with different functional groups. We attached cholate derivatives to the POSS and evaluated their lithographic properties, and found to be promising for 193 nm optical lithography. |
| 저자 |
Kim1, Jin-Baek2, Ramakrishnan Ganesan1
|
| 소속 |
1Department of Chemistry, 2KAIST |
| 키워드 |
photoresist; 193 nm; POSS
|
| E-Mail |
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