Cu(In, Ga)Se-2 thin films were formed using the commercial Cu(In, Ga)Se-2 bulk by electron-beam evaporation method with the various beam current of the irradiated electrons. The experimental results showed that the Cu-rich Cu(In1-xGax)Se-2 films could be deposited successfully when the electron-beam current increased up to 90 mA. After the annealing process at 550 degrees C for 1 h in the vacuum of 3 x 10(-6) torr, the as-deposited amorphous Cu(In, Ga)Se-2 thin film was crystallized and the Cu-rich CIGS film was converted to Cu-poor film. The chemical composition the morphology and the band gap of the annealed Cu(In, Ga)Se-2 films were also analyzed. Crown Copyright (C) 2010 Published by Elsevier B.V. All rights reserved.