GaCrN nanorods were grown on GaN nanorods by RF-plasma-assisted molecular beam epitaxy. GaN nanorods were grown on Si (001) substrates with native SiO2 Cr doping into GaCrN nanorods was conducted at substrate temperatures of 800 and 550 degrees C. Cross-sectional transmission electron microscopy images revealed that the diameter of GaCrN nanorod gradually increases with growth proceeding at 550 degrees C, while the growth at 800 degrees C does not change the nanorod diameter. Low-temperature growth enhances the growth perpendicular to the c-axis and decreases the growth along the c-axis. It was found that the solubility limit of Cr atoms in GaCrN is much higher for the low-temperature growth than for the high-temperature growth. It was also found that the highest saturation magnetization is obtained at some optimum Cr cell temperature. (C) 2009 Elsevier B.V. All rights reserved.