Overgrowth of GaN on Be-doped coalesced GaN nanocolumn layer by rf-plasma-assisted molecular-beam epitaxy-Formation of high-quality GaN microcolumns

Kato K; Kishino K; Sekiguchi H; Kikuchi A

Journal of Crystal Growth, Vol.311, No.10, 2956-2961, 2009

DOI10.1016/j.jcrysgro.2009.01.057 Export Citation

Overgrowth of GaN on Be-doped coalesced GaN nanocolumn layer by rf-plasma-assisted molecular-beam epitaxy-Formation of high-quality GaN microcolumns

Kato K, Kishino K, Sekiguchi H, Kikuchi A

GaN crystals were overgrown on GaN nanocolumn platforms with a Be-doped coalesced layer by rf-plasma-assisted molecular-beam epitaxy (rf-MBE). The overgrown GaN included large micrometerscale hexagonal columnar crystals. These microcrystals were named 'microcolumns' and showed high optical properties comparable to those of GaN bulk crystals grown by hydride vapor phase epitaxy (HVPE). (C) 2009 Elsevier B.V. All rights reserved.

Keywords:Nanostructures;Molecular-beam epitaxy;Microcolumn;Nanocolumn;Nitrides;Semiconducting III-V materials