High-efficiency AlGaN-based UV light-emitting diode on laterally overgrown AlN

Nagamatsu K; Okada N; Sugimura H; Tsuzuki H; Mori F; Iida K; Bando A; Iwaya M; Kamiyama S; Amano H; Akasakia I

Journal of Crystal Growth, Vol.310, No.7-9, 2326-2329, 2008

DOI10.1016/j.jcrysgro.2007.11.152 Export Citation

High-efficiency AlGaN-based UV light-emitting diode on laterally overgrown AlN

Nagamatsu K, Okada N, Sugimura H, Tsuzuki H, Mori F, Iida K, Bando A, Iwaya M, Kamiyama S, Amano H, Akasakia I

Ultraviolet light-emitting diodes (UV-LEDs) with a peak wavelength of 335 nm were fabricated on AlN/sapphire templates. As templates for the fabrication of UV-LEDs, planar AlN and epitaxial laterally overgrown (ELO) AlN on sapphire (0 0 0 1) substrates were compared. The output power of UV-LEDs grown on ELO-AlN was 27 times higher than that of UV-LEDs on the planar AlN template. (C) 2007 Elsevier B.V. All rights reserved.

Keywords:metal-organic vapor phase epitaxy;nitrides;light-emitting diodes