Reduction of proximity effect in electron beam lithography by deposition of a thin film of silicon dioxide

Chang-Ho Seo; Kahp-Yang Suh

Korean Journal of Chemical Engineering, Vol.25, No.2, 373-376, March, 2008

DOI10.1007/s11814-008-0062-x Export Citation

Reduction of proximity effect in electron beam lithography by deposition of a thin film of silicon dioxide

Chang-Ho Seo, and Kahp-Yang Suh^†

School of Mechanical and Aerospace Engineering and the Institute of Bioengineering, Seoul National University, Seoul 151-742, Korea

E-mail:

We present a simple strategy to reduce the writing time of electron beam lithography (EBL) by using a highly sensitive Shipley’s UV-5 resist while reducing proximity effects by depositing a thin film of silicon dioxide (SiO2) on silicon substrate. It was found that a simple insertion of a thin SiO2 film greatly reduced proximity effects, thereby providing enhanced resolution and better pattern fidelity. To support this conclusion, the bottom line width and sidewall slope of the developed pattern were analyzed for each substrate with different film thickness.

Keywords:Electron Beam Lithography (EBL);Proximity Effect;Thin Film;Silicon Dioxide

[References]

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Dobisz EA, Marrian CR, Salvino RE, Ancona MA, Perkins FK, Turner NH, J. Vac. Sci. Technol. B, 11(6), 2733 (1993)
Pan CT, Chen MF, Nanotechnology, 16, 410 (2005)
Wilder K, Quate CF, Singh B, Kyser DF, J. Vac. Sci. Technol. B, 16(6), 3864 (1998)
Rai-Choudhury P, Handbook of microlithography, micromachining, and microfabrication, 2 vols, SPIE Optical Engineering Press, London
Suh KY, Jeong HE, Park JW, Lee SH, Kim JK, Korean J. Chem. Eng., 23(4), 678 (2006)

[1] Medeiros DR, Aviram A, Guarnieri CR, Huang WS, Kwong R, Magg CK, Mahorowala AP, Moreau WM, Petrillo KE, Angelopoulos M, IBM Journal of Research and Development, 45, 639 (2001)

[2] Moreau WM, Semiconductor lithography: principles, practices, and materials, microdevices, Plenum Press, New York (1988)

[3] Thompson LF, Willson CG, Bowden MJ, Introduction to microlithography, 2nd ed, ACS professional reference book, American Chemical Society, Washington, DC (1994)

[4] Stebler C, Despont M, Staufer U, Chang THP, Lee KY, Rishton SA, Microelectronic Engineering, 30, 45 (1996)

[5] Seo E, Choi BK, Kim O, Microelectronic Engineering, 53, 305 (2000)

[6] Wuest R, Strasser P, Jungo M, Robin F, Erni D, Jackel H, Microelectronic Engineering, 67-8, 182 (2003)

[7] Anderson EH, Olynick DL, Chao WL, Harteneck B, Veklerov E, Journal of Vacuum Science & Technology B, 19, 2504 (2001)

[8] Wind SJ, Gerber PD, Rothuizen H, Journal of Vacuum Science & Technology B, 16, 3262 (1998)

[9] Kruger JB, Rissman P, Chang MS, J. Vac. Sci. Technol., 19, 1320 (1981)

[10] Kratschmer E, J. Vac. Sci. Technol., 19, 1264 (1981)

[11] Lee SY, Cook BD, IEEE Transactions on Semiconductor Manufacturing, 11, 108 (1998)

[12] Dobisz EA, Marrian CR, Salvino RE, Ancona MA, Perkins FK, Turner NH, J. Vac. Sci. Technol. B, 11(6), 2733 (1993)

[13] Pan CT, Chen MF, Nanotechnology, 16, 410 (2005)

[14] Wilder K, Quate CF, Singh B, Kyser DF, J. Vac. Sci. Technol. B, 16(6), 3864 (1998)

[15] Rai-Choudhury P, Handbook of microlithography, micromachining, and microfabrication, 2 vols, SPIE Optical Engineering Press, London

[16] Suh KY, Jeong HE, Park JW, Lee SH, Kim JK, Korean J. Chem. Eng., 23(4), 678 (2006)