Chemical mechanical polished Al (CMP-Al) films deposited at various temperatures were explored as the gate electrodes of amorphous- silicon (a-Si:H) inverted-staggered thin-film transistors (TFTs) for the first time. Although the surface roughness of the as-deposited Al films increased with increasing deposition temperature, Al films deposited at higher temperature were more robust to hillock formation during subsequent annealing. To take advantage of the better hillock suppression properties, CMP is employed to reduce the inherently large surface roughness of these high-temperature-deposited Al films. Our results show that the electrical characteristics of the TFTs are significantly improved. Specifically, the threshold voltage is reduced from 2.37 to 1.43 V, the mobility is improved from 0.32 to 1.36 cm(2)/V s, and the subthreshold swing is improved from 0.72 to 0.58 V/decade as the Al deposition temperature is increased from 25 to 400 degrees C.